![]() ![]() Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al 2O 3, crystallized HfO 2, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1, ON/OFF ratio of ~ 1.3 × 10 6, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al 2O 3/HfO 2 nanolaminates. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In 0.37Ga 0.20Zn 0.18O 0.25 is used as the active channel material. Here, we develop a stable laminated Al 2O 3/HfO 2 insulator by atomic layer deposition at a relatively lower temperature of 150 ☌. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. The flexible TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1, ON/OFF ratio of ~ 1.3 × 10 6, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1.įlexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al 2O 3/HfO 2 insulator. A stable laminated Al 2O 3/HfO 2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 ☌.
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